? 2005 ixys all rights reserved ixfa 12n50p ixfp 12n50p symbol test conditions maximum ratings v dss t j = 25 c to 150 c 500 v v dgr t j = 25 c to 150 c; r gs = 1 m 500 v v gsm transient 40 v v gsm continuous 30 v i d25 t c = 25 c12a i dm t c = 25 c, pulse width limited by t jm 20 a i ar t c = 25 c12a e ar t c = 25 c24mj e as t c = 25 c 600 mj dv/dt i s i dm , di/dt 100 a/ s, v dd v dss , 20 v/ns t j 150 c, r g = 10 p d t c = 25 c 200 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6 mm (0.062 in.) from case for 10 s 300 c plastic body for 10 seconds 260 c m d mounting torque (to-220) 1.13/10 nm/lb.in. weight to-220 4 g to-263 3 g g = gate d = drain s = source tab = drain symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. v dss v gs = 0 v, i d = 250 a 500 v v gs(th) v ds = v gs , i d = 1 ma 3.0 5.5 v i gss v gs = 30 v dc , v ds = 0 100 na i dss v ds = v dss 5 a v gs = 0 v t j = 125 c 150 a r ds(on) v gs = 10 v, i d = 0.5 i d25 , note 1 500 m polarhv tm power mosfet n-channel enhancement mode avalanche rated ixfa 12n50p ixfp 12n50p v dss = 500 v i d25 =12 a r ds(on) 0.5 t rr 200 ns ds99436(09/05) advance technical information to-220 (ixfp) d (tab) g s to-263 (ixfa) g s (tab) features z international standard packages z unclamped inductive switching (uis) rated z low package inductance - easy to drive and to protect advantages z easy to mount z space savings z high power density
ixys reserves the right to change limits, test conditions, and dimensions. ixfa 12n50p ixfp 12n50p ixys mosfets and igbts are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405b2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6771478 b2 symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. g fs v ds = 20 v; i d = 0.5 i d25 , note 1 13 s c iss 1690 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 182 pf c rss 16 pf t d(on) 22 ns t r v gs = 10 v, v ds = 0.5 v dss , i d = i d25 27 ns t d(off) r g = 50 (external) 65 ns t f 20 ns q g(on) 29 nc q gs v gs = 10 v, v ds = 0.5 v dss , i d = 0.5 i d25 11 nc q gd 10 nc r thjc 0.62 k/w r thck (to-220) 0.25 kw source-drain diode characteristic values t j = 25 c unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 44 a i sm repetitive 132 a v sd i f = i s , v gs = 0 v, note 1 1.5 v t rr i f = 22 a, -di/dt = 100 a/ s 200 ns q rm v r = 100 v, v gs = 0 v 0.4 c i rm 4f a note 1: pulse test, t 300 s, duty cycle d 2 % pins: 1 - gate 2 - drain 3 - source 4 - drain to-220 (ixtp) outline dim. millimeter inches min. max. min. max. a 4.06 4.83 .160 .190 a1 2.03 2.79 .080 .110 b 0.51 0.99 .020 .039 b2 1.14 1.40 .045 .055 c 0.46 0.74 .018 .029 c2 1.14 1.40 .045 .055 d 8.64 9.65 .340 .380 d1 7.11 8.13 .280 .320 e 9.65 10.29 .380 .405 e1 6.86 8.13 .270 .320 e 2.54 bsc .100 bsc l 14.61 15.88 .575 .625 l1 2.29 2.79 .090 .110 l2 1.02 1.40 .040 .055 l3 1.27 1.78 .050 .070 l4 0 0.38 0 .015 r 0.46 0.74 .018 .029 to-263 (ixta) outline pins: 1 - gate 2, 4 - drain 3 - source
? 2005 ixys all rights reserved ixfa 12n50p ixfp 12n50p fig. 2. extended output characteristics @ 25 o c 0 3 6 9 12 15 18 21 24 27 30 0 3 6 9 12 15 18 21 24 27 30 v d s - volts i d - amperes v gs = 10v 8v 7v 6v fig. 3. output characteristics @ 125 o c 0 2 4 6 8 10 12 024681012 v d s - volts i d - amperes v gs = 10v 8v 7v 5v 6v fig. 1. output characteristics @ 25 o c 0 2 4 6 8 10 12 01234567 v d s - volts i d - amperes v gs = 10v 8v 7v 6v fig. 4. r ds(on ) norm alized to 0.5 i d25 value vs. junction tem perature 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r d s ( o n ) - normalize d i d = 12a i d = 6a v gs = 10v fig. 6. drain current vs. case temperature 0 2 4 6 8 10 12 14 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes fig. 5. r ds(on) norm alized to 0.5 i d25 value vs. i d 0.7 1 1.3 1.6 1.9 2.2 2.5 2.8 3.1 0 3 6 9 12 15 18 21 24 27 30 i d - amperes r d s ( o n ) - normalize d t j = 125 o c t j = 25 o c v gs = 10v
ixys reserves the right to change limits, test conditions, and dimensions. ixfa 12n50p ixfp 12n50p fig. 11. capacitance 10 100 1000 10000 0 5 10 15 20 25 30 35 40 v d s - volts capacitance - picofarads c iss c oss c rs f = 1mhz fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 3 6 9 12 15 18 21 24 27 30 q g - nanocoulombs v g s - volts v ds = 250v i d = 6a i g = 10ma fig. 7. input adm ittance 0 2 4 6 8 10 12 14 16 18 20 4.5 5 5.5 6 6.5 7 7.5 v g s - volts i d - amperes t j = 125 o c 25 o c -40 o c fig. 8. transconductance 0 3 6 9 12 15 18 21 24 27 0 2 4 6 8 1012 14 1618 20 i d - amperes g f s - siemens t j = -40 o c 25 o c 125 o c fig. 9. source current vs. source-to-drain voltage 0 1 2 3 4 5 6 7 8 9 0.45 0.5 0.55 0.6 0.65 0.7 0.75 0.8 0.85 v s d - volts i s - amperes t j = 125 o c t j = 25 o c fig. 12. for w ar d-bias safe operating area 0.1 1 10 100 10 100 1000 v d s - volts i d - amperes 100 s 1ms dc t j = 150oc t c = 25oc r ds(on) limit 10ms 25 s
? 2005 ixys all rights reserved ixfa 12n50p ixfp 12n50p fig. 13. maximum transient thermal resistance 0.01 0.10 1.00 0.01 0.1 1 10 100 1000 pulse width - milliseconds r ( t h ) j c - o c / w
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